samfurori

Kayayyaki

Ƙarewar Chip

Takaitawar Chip wani nau'i ne na gama gari na marufi na kayan lantarki, wanda aka saba amfani da shi don hawa saman allon da'ira. Masu juriyar chip wani nau'in resistor ne da ake amfani da shi don iyakance wutar lantarki, daidaita juriyar da'ira, da ƙarfin lantarki na gida. Ba kamar masu juriyar soket na gargajiya ba, masu juriyar tashar faci ba sa buƙatar a haɗa su da allon da'ira ta hanyar soket, amma ana haɗa su kai tsaye zuwa saman allon da'ira. Wannan nau'in marufi yana taimakawa wajen inganta ƙanƙantar aiki, aiki, da amincin allon da'ira.


  • Babban bayanan fasaha:
  • Ƙarfin da aka ƙima:10-500W
  • Kayan ƙasa:BeO、AlN、Al2O3
  • Darajar juriya mara iyaka:50Ω
  • Juriyar juriya:±5%, ±2%, ±1%
  • Ma'aunin Emperature:<150ppm/℃
  • Zafin aiki:-55~+150℃
  • Ma'aunin ROHS:Mai bin doka
  • Zane na musamman yana samuwa akan buƙata.:
  • Cikakken Bayani game da Samfurin

    Alamun Samfura

    Karewar Chip (Nau'in A)

    Ƙarewar Chip
    Babban bayani dalla-dalla na fasaha:
    Ƙarfin da aka ƙima: 10-500W
    Kayan substrate: BeO, AlN, Al2O3
    Matsayin juriya mara iyaka: 50Ω
    Juriyar Juriya: ±5%, ±2%, ±1%
    ma'aunin ƙima mai yawa<<150ppm/℃
    Zafin aiki:-55~+150℃
    Ma'aunin ROHS: Ya dace da
    Ma'aunin da ya dace: Q/RFTYTR001-2022

    asdxzc1
    Ƙarfi(W) Mita Girma (naúra: mm)   SubstrateKayan Aiki Saita Takardar Bayanai (PDF)
    A B C D E F G
    10W 6GHz 2.5 5.0 0.7 2.4 / 1.0 2.0 AlN Hoto na 2     RFT50N-10CT2550
    10GHz 4.0 4.0 1.0 1.27 2.6 0.76 1.40 BeO Hoto na 1     RFT50-10CT0404
    12W 12GHz 1.5 3 0.38 1.4 / 0.46 1.22 AlN Hoto na 2     RFT50N-12CT1530
    20W 6GHz 2.5 5.0 0.7 2.4 / 1.0 2.0 AlN Hoto na 2     RFT50N-20CT2550
    10GHz 4.0 4.0 1.0 1.27 2.6 0.76 1.40 BeO Hoto na 1     RFT50-20CT0404
    30W 6GHz 6.0 6.0 1.0 1.3 3.3 0.76 1.8 AlN Hoto na 1     RFT50N-30CT0606
    60W 6GHz 6.0 6.0 1.0 1.3 3.3 0.76 1.8 AlN Hoto na 1     RFT50N-60CT0606
    100W 5GHz 6.35 6.35 1.0 1.3 3.3 0.76 1.8 BeO Hoto na 1     RFT50-100CT6363

    Karewar Chip (Nau'in B)

    Ƙarewar Chip
    Babban bayani dalla-dalla na fasaha:
    Ƙarfin da aka ƙima: 10-500W
    Kayan substrate: BeO, AlN
    Matsayin juriya mara iyaka: 50Ω
    Juriyar Juriya: ±5%, ±2%, ±1%
    ma'aunin ƙima mai yawa<<150ppm/℃
    Zafin aiki:-55~+150℃
    Ma'aunin ROHS: Ya dace da
    Ma'aunin da ya dace: Q/RFTYTR001-2022
    Girman haɗin gwiwa na solder: duba takardar ƙayyadaddun bayanai
    (wanda za'a iya customize bisa ga buƙatun abokin ciniki)

    图片1
    Ƙarfi(W) Mita Girma (naúra: mm) SubstrateKayan Aiki Takardar Bayanai (PDF)
    A B C D H
    10W 6GHz 4.0 4.0 1.1 0.9 1.0 AlN     RFT50N-10WT0404
    8GHz 4.0 4.0 1.1 0.9 1.0 BeO     RFT50-10WT0404
    10GHz 5.0 2.5 1.1 0.6 1.0 BeO     RFT50-10WT5025
    20W 6GHz 4.0 4.0 1.1 0.9 1.0 AlN     RFT50N-20WT0404
    8GHz 4.0 4.0 1.1 0.9 1.0 BeO     RFT50-20WT0404
    10GHz 5.0 2.5 1.1 0.6 1.0 BeO     RFT50-20WT5025
    30W 6GHz 6.0 6.0 1.1 1.1 1.0 AlN     RFT50N-30WT0606
    60W 6GHz 6.0 6.0 1.1 1.1 1.0 AlN     RFT50N-60WT0606
    100W 3GHz 8.9 5.7 1.8 1.2 1.0 AlN     RFT50N-100WT8957
    6GHz 8.9 5.7 1.8 1.2 1.0 AlN     RFT50N-100WT8957B
    8GHz 9.0 6.0 1.4 1.1 1.5 BeO     RFT50N-100WT0906C
    150W 3GHz 6.35 9.5 2.0 1.1 1.0 AlN     RFT50N-150WT6395
    9.5 9.5 2.4 1.5 1.0 BeO     RFT50-150WT9595
    4GHz 10.0 10.0 2.6 1.7 1.5 BeO     RFT50-150WT1010
    6GHz 10.0 10.0 2.6 1.7 1.5 BeO     RFT50-150WT1010B
    200W 3GHz 9.55 5.7 2.4 1.0 1.0 AlN     RFT50N-200WT9557
    9.5 9.5 2.4 1.5 1.0 BeO     RFT50-200WT9595
    4GHz 10.0 10.0 2.6 1.7 1.5 BeO     RFT50-200WT1010
    10GHz 12.7 12.7 2.5 1.7 2.0 BeO     RFT50-200WT1313B
    250W 3GHz 12.0 10.0 1.5 1.5 1.5 BeO     RFT50-250WT1210
    10GHz 12.7 12.7 2.5 1.7 2.0 BeO     RFT50-250WT1313B
    300W 3GHz 12.0 10.0 1.5 1.5 1.5 BeO     RFT50-300WT1210
    10GHz 12.7 12.7 2.5 1.7 2.0 BeO     RFT50-300WT1313B
    400W 2GHz 12.7 12.7 2.5 1.7 2.0 BeO     RFT50-400WT1313
    500W 2GHz 12.7 12.7 2.5 1.7 2.0 BeO     RFT50-500WT1313

    Bayani

    Masu juriya na tashar guntu suna buƙatar zaɓar girma da kayan substrate masu dacewa bisa ga buƙatun iko da mita daban-daban. Kayan substrate gabaɗaya ana yin su ne da beryllium oxide, aluminum nitride, da aluminum oxide ta hanyar juriya da bugawa da'ira.

    Ana iya raba resistor na tashar guntu zuwa siriri ko fina-finai masu kauri, tare da girma dabam-dabam na yau da kullun da zaɓuɓɓukan wutar lantarki. Hakanan zamu iya tuntuɓar mu don samun mafita na musamman bisa ga buƙatun abokin ciniki.

    Fasahar hawa saman (SMT) nau'i ne na gama gari na marufi na kayan lantarki, wanda aka saba amfani da shi don hawa saman allon da'ira. Masu juriyar guntu nau'in resistor ne da ake amfani da shi don iyakance wutar lantarki, daidaita juriyar da'ira, da ƙarfin lantarki na gida.

    Ba kamar na gargajiya ba, na'urorin jure wa soket ba sa buƙatar a haɗa su da allon da'ira ta hanyar soket, amma ana haɗa su kai tsaye zuwa saman allon da'ira. Wannan nau'in marufi yana taimakawa wajen inganta ƙanƙantar da allon da'ira, aiki, da kuma amincin allunan da'ira.

    Masu juriya na tashar guntu suna buƙatar zaɓar girma da kayan substrate masu dacewa bisa ga buƙatun iko da mita daban-daban. Kayan substrate gabaɗaya ana yin su ne da beryllium oxide, aluminum nitride, da aluminum oxide ta hanyar juriya da bugawa da'ira.

    Ana iya raba resistor na tashar guntu zuwa siriri ko fina-finai masu kauri, tare da girma dabam-dabam na yau da kullun da zaɓuɓɓukan wutar lantarki. Hakanan zamu iya tuntuɓar mu don samun mafita na musamman bisa ga buƙatun abokin ciniki.

    Kamfaninmu yana amfani da software na duniya na HFSS don ƙira ta ƙwararru da haɓaka kwaikwayon kwaikwayo. An gudanar da gwaje-gwaje na musamman na aikin wutar lantarki don tabbatar da ingancin wutar lantarki. An yi amfani da na'urori masu auna hanyar sadarwa masu inganci don gwadawa da tantance alamun aikinta, wanda ya haifar da ingantaccen aiki.

    Kamfaninmu ya ƙirƙiro kuma ya tsara masu juriya na saman hawa tare da girma dabam-dabam, ƙarfi daban-daban (kamar masu juriya na tashar 2W-800W tare da ƙarfi daban-daban), da kuma mitoci daban-daban (kamar masu juriya na tashar 1G-18GHz). Barka da abokan ciniki su zaɓa kuma su yi amfani da su bisa ga takamaiman buƙatun amfani.
    Resistor masu ƙarfi marasa gubar da aka ɗora a saman, wanda kuma aka sani da resistor masu ƙarfi marasa gubar da aka ɗora a saman, ƙananan kayan lantarki ne da aka ƙera. Siffarsa ita ce ba ta da ledar gargajiya, amma ana haɗa ta kai tsaye a kan allon da'ira ta hanyar fasahar SMT.
    Wannan nau'in resistor yawanci yana da fa'idodin ƙaramin girma da nauyi mai sauƙi, yana ba da damar ƙirar allon kewaye mai yawan yawa, yana adana sarari, da inganta haɗin tsarin gabaɗaya. Saboda rashin leads, suna kuma da ƙarancin inductance da capacitance na parasitic, wanda yake da mahimmanci ga aikace-aikacen mita mai yawa, rage tsangwama ga sigina da inganta aikin da'irar.
    Tsarin shigarwa na masu juriya na tashar SMT marasa gubar abu ne mai sauƙi, kuma ana iya aiwatar da shigarwar rukuni ta hanyar kayan aiki na atomatik don inganta ingancin samarwa. Aikin watsa zafi yana da kyau, wanda zai iya rage zafin da mai juriya ke samarwa yadda ya kamata yayin aiki da kuma inganta aminci.
    Bugu da ƙari, wannan nau'in resistor yana da daidaito sosai kuma yana iya biyan buƙatun aikace-aikace daban-daban tare da ƙimar juriya mai tsauri. Ana amfani da su sosai a cikin samfuran lantarki, kamar abubuwan da ba su da amfani da su, masu raba RF. Maƙallan haɗi, lodin coaxial, da sauran filayen.
    Gabaɗaya, masu juriya na tashar SMT marasa gubar sun zama wani muhimmin ɓangare na ƙirar lantarki ta zamani saboda ƙaramin girmansu, kyakkyawan aikin mita mai yawa, da sauƙin shigarwa.


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